Abstract

We are investigating the possibility of waveguide modulators at argon laser wavelengths using ZnSe grown by OMVPE on GaAs substrates. The geometry of our preliminary device is shown in Figure 1. A single crystal film 8 um thick of ZnSe (n = 2.72) was grown on a buffer of ZnS_0.08Se_0.92 (n = 2.70) grown on [100] GaAs. This formed a planar waveguide for Argon laser light of dimension comparable to light guided from a single mode fiber. Parallel stripe electrodes of Au were vacuum deposited to form contacts (unannealed) to the semi-insulating ZnSe waveguide (resistivity was measured as 109 ohm-cm). The electrodes were 75 um apart. A short waveguide 0.635 mm in length was cleaved and argon laser light was focussed into and out of this guide with microscope objectives. The relative intensity of the guided light was monitored on a silicon detector. The initial devices were planar waveguides; lateral confinement was not required because of the short length of the sample and wide electrode spacing.

© 1988 Optical Society of America