Abstract
Selective interdiffusion of semiconductor quantum-well (QW) structures is a versatile process for the fabrication and integration of both new and existing photonic devices. The impurity-free defect diffusion process has previously been demonstrated to facilitate continuous tuning of the effective bandgap of GaAs/AlGaAs QWs over an energy range of at least 40 meV while still preserving the room-temperature exciton-related absorptive and refractive properties of the QWs.1 In the present work the above interdiffusion process is further demonstrated to facilitate fabrication of efficient waveguide modulators operating over a wide range of wavelengths in a single epitaxial wafer. In addition, interdiffusion is demonstrated for the first time to facilitate tuning of the intersubband transitions in QWs.
© 1991 Optical Society of America
PDF ArticleMore Like This
O. Humbach, R. Soyka, A. Stöhr, S. Bürkner, J. D. Ralston, E. C. Larkins, and D. Jäger
ThF28 Integrated Photonics Research (IPR) 1994
Joseph Micallef, James L. Borg, Wallace C.H. Choy, and E. Herbert Li
17D1.5 Optoelectronics and Communications Conference (OECC) 1996
K. S. CHAN and MICHAEL C.Y. CHAN
IMH5 Integrated Photonics Research (IPR) 1998