Three-dimensional Thermal Analysis of a Waveguide Ge/Si Photodiode

Molly Piels; Anand Ramaswamy; John E. Bowers; Tao Yin; Dustin Kendig; Ali Shakouri

doi:10.1364/IPRSN.2010.ITuA5

Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper ITuA5
•https://doi.org/10.1364/IPRSN.2010.ITuA5

Three-dimensional Thermal Analysis of a Waveguide Ge/Si Photodiode

Molly Piels, Anand Ramaswamy, John E. Bowers, Tao Yin, Dustin Kendig, and Ali Shakouri

Integrated Photonics Research, Silicon and Nanophotonics 2010

Monterey, California United States
25–28 July 2010
ISBN: 978-1-55752-895-7

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Nanophotonic Lasers and Photodetectors (ITuA)

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M. Piels, A. Ramaswamy, J. E. Bowers, T. Yin, D. Kendig, and A. Shakouri, "Three-dimensional Thermal Analysis of a Waveguide Ge/Si Photodiode," in Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper ITuA5.

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Abstract

The spatial temperature distribution of a high power Ge/Si waveguide n-i-p photodiode is experimentally obtained using a time-domain thermoreflectance imaging technique. Measurement results are shown to be in good agreement with simulated values.

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