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Experimental Investigation of CMOS-Compatible Metal-Insulator-Silicon-Insulator-Metal Waveguides

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Abstract

Metal-insulator-silicon-insulator-metal waveguides are experimentally investigated. Their fabrication process is explained, and their measured characteristics are discussed. Their measured propagation loss is 0.262 (0.219) dB/µm when the width of silicon is ~156 (~183) nm.

© 2012 Optical Society of America

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