Abstract
Semiconductor quantum-well structures have received a great deal of attention in recent years. Their electronic properties due to the reduced dimensionality lead to a myriad of novel and enhanced performance electronic and optoelectronic devices. One feature that has led to improved and new devices is the enhanced mobility of carriers at energies high above the band edge. As first observed by Xu and Tang,1 and to date by a number of others,2 highly excited electrons in quantum-well structures retain their excess energies for relatively long times before cooling to the equilibrium distribution at the lattice temperature by scattering processes. We observed similar slowing of the hot carrier relaxation rate in mismatched lattice quantum-well structures, or strained-layer superlattices (SLSs).
© 1986 Optical Society of America
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