Abstract
We studied free-carrier-induced optical nonlinearities in a variety of semiconductors by four- wave-mixing experiments with CO2 lasers. The large dispersion of the third-order susceptibility—measured by varying the difference frequency of the two lasers—is directly related to the relaxation time of the nonlinear process. This simple method has been used to determine several relaxation times in the 10−13−5 × 10−12 range. We observed nonlinearities induced by energy band non-parabolicity, intervalence band transition, valley transfer, excess carrier generation, as well as impurity scattering near the metal—insulator transition.
© 1987 Optical Society of America
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