Abstract
Optical nonlinearities in the spectral region of a semiconductor band edge are frequently induced by renormalization of the band gap at high optical excitation levels. This renormalization arises from correlation and exchange effects at high carrier densities. While previous measurements have been sensitive only to the combined effects of exchange and correlation, here we demonstrate that picosecond time-resolved photoluminescence can be applied to experimentally isolate the electron exchange contributions in the AlxGa1-xAs system.
© 1987 Optical Society of America
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