Abstract
Laser induced chemical vapor deposition (CVD) has been paid a great attention. In order to understand details of the process, knowledge about fundamental constants, such as the reaction, the diffusion, and the trapping (onto the substrate) coefficients is important. This paper describes the measurements of these constants by the laser induced fluorescence spectroscopy (LIF), applying the gas-phase process In C2H2 photolyzed by an ArF laser, by which it is known to deposit diamond-like thin films [1] Tracing temporal and spatial behaviours of C2 radicals produced by the photolysis, we determined the diffusion coefficient of the C2 radicals experimentally for the first, time, together with its reaction coefficient for C2H2 Two-photon excitation spectroscopy was also applied to detect H2 and H2 whose single e-photon excitation by dye lasers is difficult.
© 1988 Optical Society of America
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