Abstract
Intersubband absorption of electrons in quasi-2-D semiconductor structures has received much attention from a fundamental physics point of view and for semiconductor devices. Here we study—on a picosecond time scale—transient intersubband absorption spectra of hot electrons in an n-type modulation doped Ga0.47In0.53As/Al0.48In0.52As MQW structure grown by molecular beam epitaxy [quantum well (QW) thickness, 8.2 nm; electron density, 4.2 × 1011 cm−2/QW]. Electron-hole pairs with an excess energy of 0.3 eV are generated by picosecond interband excitation in the near IR (excitation density, N ≃ 2×1011 cm−2).
© 1990 Optical Society of America
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