Abstract

Radiation damaging in semiconductors is an effective way to control the trapping and re combination characteristics of photoexcited carriers and it has been shown that lifetimes shorter than 100 fs can be observed.^[1] These ultrashort lifetimes are in the subpicosecond time scale of the thermalization phenomena and therefore it is possible to study the ultrafast thermalization characteristics with time-integrated luminescence spectroscopy since the ultrashort carrier lifetime represents a “built-in time resolution”.

© 1992 IQEC