Abstract
A recent investigation of coherent cw excitations of a planar semiconductor microcavity structure composed of a 200-Å GaAs quantum well embedded in a AlGaAs/AlAs DBR microcavity at 4 K exliibited evidence of β = 1 thresholdless behavior.1 We have performed time-resolved measurements of the same structure. Emission processes excited high above the band (off-resonantly excited) were measured to be of the order of 50 ps. Emission from resonant excitation is complete in less than 15 ps. A. simple model explains the quantitative features observed.
© 1994 Optical Society of America
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