Abstract
Interface states at metal/semiconductor junctions have received intense interest because of their perceived role in affecting device properties. Nonlinear optical spectroscopy is well suited for studying these buried interfaces as a result of its inherent interface sensitivity and long penetration depth [1]. Here we report observations of midgap interface states at the metal/GaAs [001] interface by second harmonic generation (SHG) and sum frequency generation (SFG).
© 1996 Optical Society of America
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