Abstract
In this paper, we report the experimental results of in-situ kinetical thermal annealing processes in strained uitrathin Si/Ge SL’s on vicinal Si( 100) by Raman scattering. Many authors have indicated that vicinal Si(100) is one of the most intriguing semiconductor surface from both a scientific and technological point of view. Scientifically, its propensity to form double steps is particularly interesting [1-3], Technologically, the tendency to form double steps has important significance for heteroepitaxy on Si(100) [2,4]. But, to our knowledge, there is not yet any report on investigation of the Raman scattering spectra of ultrathin Sim/Gen SL’s on a vicinal Si(100) substrate.
© 1996 Optical Society of America
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