Abstract
The study of carrier capture and relaxation in self-organized quantum dots is a key step in the understanding of the device physics of novel quantum-dot lasers and detectors. We have investigated these ultrafast processes in In0.4Ga0.6as quantum dots using femtosecond differential transmission (DT) spectroscopy at 10 K. The sample consists of four undoped layers of self-organized InGaAs quantum dots with GaAs barriers and AlGaAs cladding layers.
© 1998 Optical Society of America
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