Abstract
Biased large aperture semiconductor emitters are widely used to generate ultrashort broadband terahertz (THz) pulses [1]. The temporal shape of such pulses can be determined through a phase sensitive electro-optic or photoconduction sampling technique The measured profile of the THz pulse then depends on several factors: (i) incoming optical pulse shape, (ii) dynamics of photo-excited earners in the THz emitter, (iii) far-infrared optics transforming the THz beam, and (iv) receiving antenna or sensor spectral detectivity [2].
© 2000 IEEE
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