Radiation Damages in CMOS Active Pixel Sensors

Vincent Goiffon; Pierre Magnan; Cédric Virmontois; Paola Cervantes; Franck Corbière; Magali Estribeau

doi:10.1364/ISA.2011.IMA3

Imaging and Applied Optics
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper IMA3
•https://doi.org/10.1364/ISA.2011.IMA3

Radiation Damages in CMOS Active Pixel Sensors

Vincent Goiffon, Pierre Magnan, Cédric Virmontois, Paola Cervantes, Franck Corbière, and Magali Estribeau

Imaging Systems and Applications 2011

Toronto Canada
10–14 July 2011
ISBN: 978-1-55752-914-5

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V. Goiffon, P. Magnan, C. Virmontois, P. Cervantes, F. Corbière, and M. Estribeau, "Radiation Damages in CMOS Active Pixel Sensors," in Imaging and Applied Optics, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper IMA3.

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Abstract

This paper presents a summary of the main results we observed on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current.

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