Abstract
Some nano-lithography processes have been developed for high density and fine structure mastering process such as e-beam lithography, near field lithography system and DUV lithography system etc. There are still some challenges such as optical diffraction limit, high equipment cost, small writing area and low writing velocity for these lithography machines. In order to overcome this problems, we have developed an innovative and cost effective nano-lithography system by using bule laser pick-up head system to write the thermal mode inorganic photo-resist materials(1)(2). The technique adopts a phase change metal or metal oxide resist film which is sputtered by using vacuum sputtering system. The thermal mode photo resit film can overcome the optical diffraction issues to write smaller pits. In this paper, we use inorganic material with composition GeSbSnOx (GSSO) for thermal lithography and use inductively coupled plasma reactive ion etching (ICP-RIE) to fabricate nano-structure.
© 2011 Optical Society of America
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