Abstract

As a vital component of optical communication networks, electro-optical (EO) modulator has received tremendous attention and been extensively researched. [1,2] By leveraging the mature CMOS fabrication process, Si and SiN is regarded as a promising photonic material platform. Nevertheless, Si or Si₃N₄ is not considered to be an ideal material for efficient modulation due to the lack of Pockels and Franz-Keldysh effect at the communication wavelength [3], which makes it difficult to encode electrical signals into optical signals in the with a reasonable modulation voltage. [4] To address this dilemma, heterogeneous integration has been successfully proposed and demonstrated. Specifically, EO- active materials need to be integrated into active regions of Si/SiN photonic circuits to enable the EO response.

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