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Proposal for a Universal Two-Qubit Quantum Gate in Self-Assembled InAs/GaAs Quantum Dot Molecules with Intensity-Modulated CW Laser

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Abstract

We propose a universal two-qubit gate by inducing Raman transitions between singlet-triplet states in doubly-charged quantum dot molecules using intensity-modulated CW laser. By numerical optimization, a gate-fidelity above 99.99% can be achieved.

© 2013 Optical Society of America

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