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Conferences > LS > 2016 > JTh2A > JTh2A.13

Effect of Purcell Enhancement on Internal Quantum Efficiency of InGaN Green Light-Emitting Diode Structures

H. Y. Ryu, G. H. Ryu, and Y. H. Choi

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Abstract

We theoretically investigate the modification of internal quantum efficiency (IQE) in InGaN green flip-chip LED structures as a result of the Purcell effect that is found to be quite advantageous for improving the IQE InGaN green LEDs.

© 2016 Optical Society of America

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