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High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with MgO Buffer

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Abstract

We demonstrate high plasmonic quality TiN on Si (001) via PE-ALD. Employment of an MgO buffer improved the figure of merit (FoM) at 1550 nm from 2.0 to 2.5 and the peak FoM from 2.4 to 2.8.

© 2019 The Author(s)

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