Abstract
We demonstrate high plasmonic quality TiN on Si (001) via PE-ALD. Employment of an MgO buffer improved the figure of merit (FoM) at 1550 nm from 2.0 to 2.5 and the peak FoM from 2.4 to 2.8.
© 2019 The Author(s)
PDF ArticleWe demonstrate high plasmonic quality TiN on Si (001) via PE-ALD. Employment of an MgO buffer improved the figure of merit (FoM) at 1550 nm from 2.0 to 2.5 and the peak FoM from 2.4 to 2.8.
© 2019 The Author(s)
PDF Article