UV assisted growth of GaAs

P. Balk

doi:10.1364/MSBA.1987.TuC1

Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates
Technical Digest Series (Optica Publishing Group, 1987),
paper TuC1
•https://doi.org/10.1364/MSBA.1987.TuC1

UV assisted growth of GaAs

P. Balk

Microphysics of Surfaces, Beams, and Adsorbates 1987

Santa Fe, New Mexico United States
16–18 February 1987
ISBN:

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Session 6 (TuC)

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P. Balk, "UV assisted growth of GaAs," in Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates, Technical Digest Series (Optica Publishing Group, 1987), paper TuC1.

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Abstract

This contribution reviews our work on the uv stimulated growth of GaAs in the MOVPE system. These studies were performed using different metalorganic Ga compounds and AsH₃ in a H₂ carrier at different partial pressures and flow velocities over a range of temperatures. We compared stimulation using a low pressure Hg lamp (main output at 254 nm) and an excimer laser at different wavelengths.

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