Abstract
Pulsed laser etching of copper using chlorine has been demonstrated and investigated (1-3). Chlorine, however, strongly corrodes copper even in the absence of light. To avoid this problem, we have examined UV photoetching of copper using the vapor of two room temperature liquids, CF2Br2 and CCl4. Both species are inert towards copper in the dark, but will undergo gas-phase photolysis with near unit quantum efficiency to produce Br or Cl atoms. At 248 nm, the gas-phase absorption of CF2Br2 is some 3 orders larger than CCl4 Yet surprisingly, the 248 nm etch rate is similar for both over the range 1-10 torr. At 351 nm, where the gas-phase absorption for both species becomes vanishingly small, CCI4 is observed to etch copper with the same rate as at 248 nm, while CF2Br2 does not cause etching. These results suggest that gas-phase photolysis of CF2Br2, but not CCI4, is important in initiating copper etching.
© 1989 Optical Society of America
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