Abstract
Diethylsilane (DES), Si (C2H5)2H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for Si (C2H5)2H2 on Si (111) 7x7 using laser induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques.
© 1991 Optical Society of America
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