Abstract
Semiconductors typically have very large nonlinear coefficients, e.g. GaAs in the near-infrared has a second-order susceptibility coefficient around 40 times greater than conventional birefringent phase-matched crystals and about 5 times greater than the appropriate coefficient in quasi-phase-matched LiNbO3. Semiconductors also possess a transparency range which extends into the mid-infrared, a mature fabrication technology, and have the potential to be integrated with diode laser pump sources. However, cubic semi-conductors do not possess any intrinsic birefringence. To implement quasi-phase-matching the nonlinear coefficient must be controllable. It has been established that this can be accomplished with quantum well growth and selective area disordering.1,2
© 1998 Optical Society of America
PDF ArticleMore Like This
D. C. Hutchings and J. M. Arnold
QWC50 European Quantum Electronics Conference (EQEC) 1998
D. C. Hutchings and J. M. Arnold
QTuG46 European Quantum Electronics Conference (EQEC) 1996
D. C. Hutchings
FA2 Nonlinear Guided Waves and Their Applications (NP) 1999