Abstract
In spite of the large lattice mismatch between Ge and Si, high quality layers of Ge1-xSix covering the entire range of alloy compositions have been grown utilizing strained-layer epitaxy methods. Such work has led to the study of artificial crystals containing GemSin structures with m and n less than seven,1 of quasiperiodic Fibonacci superlattices,2 and of multiple layers of Ge grown on Si substrates.3 The study of such materials is of much interest both from a basic physics point of view and for designing devices with unusual electro-optic properties.
© 1988 Optical Society of America
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