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InGaAs/InP Quantum Well Nanowire Array Micro-LEDs at Telecommunication Wavelengths

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Abstract

We report the growth, fabrication and characterization of highly uniform p-i-n core-shell InGaAs/InP single quantum well nanowire array light emitting diodes operating at telecommunication wavelengths of ~1.35 and ~1.5 µm, respectively.

© 2023 The Author(s)

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