Abstract
Since double donors in silicon are the solid-state analog of the helium atom, one expects the existence of spin-triplet levels along with the singlet levels commonly observed in IR spectra. In our diffusion-doped Si:Se0 samples, a weak line was observed at 2146.38 cm−1, near the expected zero-stress position of the forbidden 1s(3T2) transition inferred by Bergman et al.1 but too sharp to have been observed in their 1-cm−1 resolution zero-stress spectra. We have studied the Zeeman splitting and polarization components of this new IR absorption line in Si:Se0 and of the corresponding feature in Si:Te0 in both the Faraday and Voigt geometries in fields up to 4 T directed along the three principal crystallographic directions. The isotropic splitting into two σ components and one central π component demonstrates the threefold multiplcity of these levels and g values of 1.0 and 1.3 for the Se and Te lines, respectively, agree well with the simple theory of Lande g factors with an orbital g factor of zero.
© 1987 Optical Society of America
PDF ArticleMore Like This
J. E. GOLUB, Y. S. BAI, T. W. MOSSBERG, NING LU, and P. R. BERMAN
THKK4 International Quantum Electronics Conference (IQEC) 1987
Joseph P. Dougherty, Francis R. Preli, and Robert G. Michel
PDP22 Laser Applications to Chemical Analysis (LACSEA) 1987
Roger G. Johnston
WB3 Laser Applications to Chemical Analysis (LACSEA) 1987