Abstract

The short-circuited Ce-SBN single crystal was illuminated by an extended argon laser beam with λ = 488 nm and intensity of 45-200 mw/cm² 68n of crystal can be measured by interference method without extraelectric field. Following results were obtained: 1. Δn_e was changed with the intensity of the illuminating beam and the value of 0.4-1.7×10^-3. 2. Δn₀ < Δn_e. 3. τ, the relaxation time of Δn_e was between 32 and 86 s and also changed with the intensity of the beam. 4. The moving direction of interference fringes due to laser beam illumination on the crystal was opposite to the effect of heat. 5. The Δn_e decreased obviously when the wavelength of the illuminating beam changed from 488 nm to 632.8 nm. 6. There were only a few effects on Δn_e when the polarization direction of the illuminating beam was changed. 7. No phase shift occurred in the space distribution of Δn_e(z) and I(z).

© 1990 Optical Society of America