Abstract
As a hybrid technology of MBE and MOCVD, chemical beam epitaxy exploits the major advantages of the two epitaxial growth techniques. The fabrication of sophistacated heterostructures and quantum-well device structures based on advanced II-VI and III-V sermiconductors will be highlighted.
© 1990 Optical Society of America
PDF ArticleMore Like This
P. DANIEL DAPKUS, J. S. OSINSKI, K. M. DZURKO, and S. G. HUMMEL
WB3 Optical Fiber Communication Conference (OFC) 1990
A. Y. Cho
WB1 Picosecond Electronics and Optoelectronics (UEO) 1987
D.L. Miller
ThC6 Picosecond Electronics and Optoelectronics (UEO) 1985