Abstract
InSb has been shown to exhibit bistability and a very large nonlinear index.1 A semiconductor which is similiar, but which has a bandgap at shorter wavelengths is InAs. In this talk we present measurements of saturable absorption in InAs using an HF laser, which matches the bandgap of InAs at temperatures from 5° to 100° K. Using these measurements we have calculated a nonlinear refractive index of n2 = 2x10−5 cm2/W for light near but below the bandgap. These numbers are comparable to those measured in InSb and indicate that InAs may be a good material for bistable devices.
© 1983 Optical Society of America
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