Abstract

Textured Ge thin films⁽¹⁾ prepared by reactive ion etching showed a significantly improved writing sensitivity compared to conventional pit-forming writing on the same material. A preliminary theoretical analysis shows that the surface energy stored on the textured columns is sufficient to initiate the writing process. Thus, the energy barrier for the pit formation, other than the energy required to melt a spot itself, is virtually eliminated. This allows the writing sensitivity enhancement.

© 1983 Optical Society of America