Abstract

Work is in progress for improving the switching times of erasable as well as DOW type of optical memories. As it has been already established that the erasure time (a→c) is dominated by incubation time (τ), hence τ needs to be explored more in depth [1]. In the present work the mass, molecular diameter and density effects have been shown in addition to the temperature effects. The earlier calculations could only estimate the value of τ using arrange of critical radii values [2,6], whereas the present model can be used to calculate the exact values of critical radii using shape factor calculations for grain boundary, grain edge and grain comer nucleation separately. Knowing the material parameter of a system, one can calculate variation of x with temperature, mass or composition.

© 1998 Optical Society of America