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Conferences > OECC > 1996 > 17D1 > 17D1.3
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 17D1.3

Allowable Input Optical Power of InGaAsP Electro-Absorption Modulator

Hideaki Tanaka and Yuichi Matsushima

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Abstract

The breakdown phenomena in an InGaAsP electro-absorption modulator were studied. As the bias voltage being higher or AEg being smaller, the input power for breakdown became smaller. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

© 1996 IEICE

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