Abstract
Third-order nonlinear effects in silicon photonics are traditionally spoiled by free carrier effects and this matter of fact usually quantified through a nonlinear figure of merit (FOMTPA) given by the ratio between the real and imaginary parts of the nonlinear susceptibility in silicon waveguides. In this context, we have achieved a particular reduction of the TPA contribution by considering silicon slot waveguide configurations . Optimization of the geometry of silicon slotted waveguides has been performed on the basis of the FOMTPA of the guided mode and has revealed the importance of properly choosing the waveguide width of the silicon rails in order to minimize the TPA effect even by tolerating a reduced overall nonlinearity.
© 2015 Optical Society of America
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