Abstract
The relatively small ground state absorption cross section and large excited state absorption cross section at ≈800 nm make Al- GaAs diode lasers unattractive as pumps for Er3+ doped silica fiber lasers and amplifiers. A more promising approach is to excite the 4i11/2 state at ≈980 nm.1 This pump band has a large ground state absorption cross section and is free of excited state absorption. Laming et al. demonstrated a high efficiency amplifier diode pumped at this wavelength.2
© 1990 Optical Society of America
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