Submicron silicon bipolar decision circuit and demultiplexer for very high speed lightwave communication systems

K. RUNGE; JAMES L. GIMLETT; D. CLAWIN; W. I. WAY; NIM K. CHEUNG; I. KIPNIS; C. SNAPP

doi:10.1364/OFC.1990.TUI4

Optical Fiber Communication
OSA Technical Digest (Optica Publishing Group, 1990),
paper TUI4
•https://doi.org/10.1364/OFC.1990.TUI4

Submicron silicon bipolar decision circuit and demultiplexer for very high speed lightwave communication systems

K. RUNGE, JAMES L. GIMLETT, D. CLAWIN, W. I. WAY, NIM K. CHEUNG, I. KIPNIS, and C. SNAPP

Optical Fiber Communication Conference 1990

San Francisco, California United States
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High Speed Systems (TUI)

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K. RUNGE, J. L. GIMLETT, D. CLAWIN, W. I. WAY, N. K. CHEUNG, I. KIPNIS, and C. SNAPP, "Submicron silicon bipolar decision circuit and demultiplexer for very high speed lightwave communication systems," in Optical Fiber Communication, OSA Technical Digest (Optica Publishing Group, 1990), paper TUI4.

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Abstract

Lightwave systems technology has advanced dramatically over the past decade with recent experiments achieving a system capacity in excess of 1 Tbit/s km at 11 Gbit/s.¹ Despite significant advances in GaAs FET technologies and heterojunction bipolar transistors, silicon bipolar technology has lately emerged as a promising low cost, high performance technology for multi-Gbit/s lightwave communication systems.

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