Abstract
Intensity modulators are key components for achieving high-bit- rate (>10 Gbit/s) and low-chirp sources for AM long-span optical transmissions. Large amounts of data have been reported on quantum-confined-Stark-effect (QCSE) intensity modulators,1-3 with less reported on Wannier-Stark effect (WSE) ones.4 We present an intensity modulator based on the InGaAs/InP superlattice (SL). The extinction ratio has been measured to be larger than 25 dB for a 1-V driving voltage at a 1.54-µm working wavelength. This efficient electroabsorption is attributed to resonance-induced electron delocalization on adjacent quantum wells under high electric fields (>150 kV/cm).5
© 1993 Optical Society of America
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