25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation

G. Sakiano; T. Takiguchi; Y. Hokama; T. Nagira; H. Yamaguchi; E. Ishimura; A. Sugitatsu; T. Shimura

doi:10.1364/OFC.2012.OTh3F.3

Optical Fiber Communication Conference
OSA Technical Digest (Optica Publishing Group, 2012),
paper OTh3F.3
•https://doi.org/10.1364/OFC.2012.OTh3F.3

25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation

G. Sakiano, T. Takiguchi, Y. Hokama, T. Nagira, H. Yamaguchi, E. Ishimura, A. Sugitatsu, and T. Shimura

Optical Fiber Communication Conference 2012

Los Angeles, California United States
4–8 March 2012
ISBN: 978-1-55752-938-1

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Lasers for High Speed Applications (OTh3F)

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G. Sakiano, T. Takiguchi, Y. Hokama, T. Nagira, H. Yamaguchi, E. Ishimura, A. Sugitatsu, and T. Shimura, "25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation," in Optical Fiber Communication Conference, OSA Technical Digest (Optica Publishing Group, 2012), paper OTh3F.3.

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Abstract

25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.

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