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First Demonstration of an Optical Content Addressable Memory (CAM) Cell at 10 Gb/s

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Abstract

We experimentally demonstrate the first all-optical Content Addressable Memory (CAM) cell, employing a monolithically integrated InP Flip-Flop and a SOA-MZI XOR gate. Error-free operation during Write operation and Content Addressing is achieved at 10 Gb/s.

© 2016 Optical Society of America

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