Multi-Gigabit Operation of a Compact, Broadband Modulator Based on ENZ Confinement in Indium Oxide

Gordon A. Keeler; Kent M. Geib; Darwin K. Serkland; S. Parameswaran; Ting S. Luk; Ting S. Luk; Alejandro J. Griñe; Jon Ihlefeld; Salvatore Campione; Joel R. Wendt

doi:10.1364/OFC.2017.Th3I.1

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper Th3I.1
•https://doi.org/10.1364/OFC.2017.Th3I.1

Multi-Gigabit Operation of a Compact, Broadband Modulator Based on ENZ Confinement in Indium Oxide

Gordon A. Keeler, Kent M. Geib, Darwin K. Serkland, S. Parameswaran, Ting S. Luk, Alejandro J. Griñe, Jon Ihlefeld, Salvatore Campione, and Joel R. Wendt

Optical Fiber Communication Conference 2017

Los Angeles, California United States
19–23 March 2017
ISBN: 978-1-943580-23-1

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Novel Photonic Devices (Th3I)

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G. A. Keeler, K. M. Geib, D. K. Serkland, S. Parameswaran, T. S. Luk, A. J. Griñe, J. Ihlefeld, S. Campione, and J. R. Wendt, "Multi-Gigabit Operation of a Compact, Broadband Modulator Based on ENZ Confinement in Indium Oxide," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper Th3I.1.

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Abstract

We report the first high-speed demonstration of a compact electroabsorption modulator based on epsilon-near-zero confinement in conducting oxide films. The non-resonant, 4µm-long device operates simultaneously over the entire C band through field-effect carrier density tuning.

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