Abstract
High-speed/power APDs with novel etched-mesa structure are demonstrated to suppress edge breakdown. With 24μm diameters, they achieve 21GHz bandwidths, 5.5A/W responsivity, and RF saturation power over +5 dBm (10 GHz) under 8mA photocurrent and 0.9Vbr.
© 2021 The Author(s)
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