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Conferences > OFC > 2022 > Th3C > Th3C.4

110 Gbit/s NRZ and 160 Gbit/s PAM-4 GeSi Electro-Absorption Modulator

Xiao Hu, Dingyi Wu, Yuguang Zhang, Hongguang Zhang, Daigao Chen, Min Liu, Jia Liu, Lei Wang, Xi Xiao, and Shaohua Yu

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Abstract

A pure Ge electro-absorption modulator operating at 1600 nm wavelength with electro-optic bandwidth beyond 67 GHz is reported. The 110 Gbit/s NRZ and 160 Gbit/s PAM-4 modulation clear openings of eye diagrams are demonstrated.

© 2022 The Author(s)

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