Abstract
Ge films are prepared by IBAD, the behavior of absorption has been analyzed from film transmittance near absorption edge. The crystal structure is characterized by XRD and electrical property has been analyzed through Hall measurement.
© 2013 Optical Society of America
PDF ArticleMore Like This
Rui Xu, Wei Li, Jian He, Kang-Cheng Qi, and Ya-Dong Jiang
83120Q Asia Communications and Photonics Conference and Exhibition (ACP) 2011
Ge Wang, Lei Zhao, Hongwei Diao, Jingwei Chen, Baojun Yan, Guanghong Wang, and Wenjing Wang
ASa3A.24 Advanced Optoelectronics for Energy and Environment (AOEE) 2013
H. J. Cho and C. K. Hwangbo
TuA8 Optical Interference Coatings (OIC) 1995