Abstract
The morphology and molecular organisation of the semiconductor layer at the interface between organic semiconductor and dielectric material of organic field-effect transistors (OFETs) is a crucial factor in achieving good device performance. It is well known that charge transport in these devices occurs near to the interface with the gate dielectric. Charge induced polarization states at this interface create a hysteresis at the transfer characteristics of the OFETs displaying two different source-drain current states by the forward and backword sweeping of the gate voltage. It is not clear what kind of charged states are induced at this critical interface. We employed attenuated total reflection Fourier transform infrared spectroscopy (ATR FTIR) as well as dielectric spectroscopy to investigate this interface. The results show that the chemical structure of materials and their interface nanomorphology determine the properties like hystheresis and ambipolar transport.
© 2006 Optical Society of America
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