Abstract
Zinc telluride crystals are grown by the Travelling Heater Method under excess tellurium conditions. Ingots with large single crystals, the order of 1/2 cm3, are obtained. Infrared microscopy shows some tellurium secondary phases. Resistivities of about 1010 Ω.cm are reached using V-Al and V-Sc codopings. A weak photorefractive gain is measured on the ZnTe : V : Al crystal. Samples are characterised by optical spectroscopy, Electron Paramagnetic Resonance and Photoluminescence in order to explain these results. More particularly, the lack of active vanadium is shown to be responsible of the weak gain. A signal corresponding to the Sc interstitial is detected by Photoluminescence.
© 2003 Optical Society of America
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