Abstract
Previous studies of time-resolved photoluminescence from GaAs/AlxGa1−xAs quantum well structures have examined material grown by molecular beam epitaxy. The large differences in behavior seen by different groups suggests a strong dependence of carrier dynamics on material. Until now, time-resolved photoluminescence from GaAs/AlxGa1−xAs quantum wells grown by metal-organic chemical vapor deposition (MOCVD) has not been extensively studied. We report data taken at temperatures from 16K to 300K and over a wide range of excitation densities on MOCVD quantum well structures. These structures were grown in a reactor which routinely produces high quality laser material, and exhibit high photoluminescence efficiency at room temperature.
© 1985 Optical Society of America
PDF ArticleMore Like This
J. E. FOUQUET, A. E. SIEGMAN, ROBERT D. BURNHAM, and T. L. PAOLI
THU2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985
JAMES J. COLEMAN
THO2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985
H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire
FA2 Photonic Switching (PS) 1987