Non Stationary Transport in MODFET’s and Heterojuction Devices

K. Hess

doi:10.1364/PEO.1987.ThB2

Topical Meeting on Picosecond Electronics and Optoelectronics
Technical Digest Series (Optica Publishing Group, 1987),
paper ThB2
•https://doi.org/10.1364/PEO.1987.ThB2

Non Stationary Transport in MODFET’s and Heterojuction Devices

K. Hess

Picosecond Electronics and Optoelectronics 1987

Incline Village, Nevada United States
14–16 January 1987
ISBN:

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K. Hess, "Non Stationary Transport in MODFET’s and Heterojuction Devices," in Topical Meeting on Picosecond Electronics and Optoelectronics, Technical Digest Series (Optica Publishing Group, 1987), paper ThB2.

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Abstract

New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.

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