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Development of 18 GHz GaAs Static Frequency Dividers and Their Evaluation by Electrooptic Sampling

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Abstract

Digital integrated circuits (ICs) operating at clock rates above 10 GHz will have a significant impact on the performance of digital systems in the next decade. We have successfully employed advanced design and fabrication techniques to raise the operational frequency of room temperature GaAs MESFET divider circuits to 18 GHz, which exceeds speeds achieved by any other technology at any temperature.

© 1987 Optical Society of America

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