Abstract

Distributed amplifiers have been used in recent years to achieve amplification over multi octave bandwidths extending to millimeter-wave frequencies [1]. The distributed (or traveling wave) amplifier topology has been especially suitable for monolithic integration using GaAs technology due to low sensitivity to component parameter variations and a relatively high active/passive component ratio. A major drawback of the approach has been the relatively low gain per stage (4-7 dB) and high current consumption. This paper describes the application of novel circuit approaches (such as cascode-connected FETs and coplanar waveguide transmission lines) and advanced devices such as high electron mobility transistors (HEMTs) to improve performance, simplify fabrication and achieve over 10 dB of single-stage gain over the 2-20 GHz band. This band is of significance for electronic countermeasures systems and microwave measurement applications.

© 1987 Optical Society of America